JPH0455347B2 - - Google Patents

Info

Publication number
JPH0455347B2
JPH0455347B2 JP59267559A JP26755984A JPH0455347B2 JP H0455347 B2 JPH0455347 B2 JP H0455347B2 JP 59267559 A JP59267559 A JP 59267559A JP 26755984 A JP26755984 A JP 26755984A JP H0455347 B2 JPH0455347 B2 JP H0455347B2
Authority
JP
Japan
Prior art keywords
barrier
region
layer
electric field
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59267559A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60158677A (ja
Inventor
Maachin Shanon Jon
Arufuretsudo Jooji Sureetaa Jon
Jeemusu Koo Debitsuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS60158677A publication Critical patent/JPS60158677A/ja
Publication of JPH0455347B2 publication Critical patent/JPH0455347B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP59267559A 1983-12-20 1984-12-20 半導体装置 Granted JPS60158677A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8333818 1983-12-20
GB08333818A GB2151844A (en) 1983-12-20 1983-12-20 Semiconductor devices

Publications (2)

Publication Number Publication Date
JPS60158677A JPS60158677A (ja) 1985-08-20
JPH0455347B2 true JPH0455347B2 (en]) 1992-09-03

Family

ID=10553527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59267559A Granted JPS60158677A (ja) 1983-12-20 1984-12-20 半導体装置

Country Status (5)

Country Link
US (1) US4646115A (en])
EP (1) EP0147893B1 (en])
JP (1) JPS60158677A (en])
DE (1) DE3463873D1 (en])
GB (1) GB2151844A (en])

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2176339A (en) * 1985-06-10 1986-12-17 Philips Electronic Associated Semiconductor device with schottky junctions
DE3631136A1 (de) * 1986-09-12 1988-03-24 Siemens Ag Diode mit weichem abrissverhalten
US5027166A (en) * 1987-12-04 1991-06-25 Sanken Electric Co., Ltd. High voltage, high speed Schottky semiconductor device and method of fabrication
CH676402A5 (en) * 1988-11-29 1991-01-15 Asea Brown Boveri Solid state pinch diode - has three zone structure with channel form and schottky electrode regions
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード
JPH0750791B2 (ja) * 1989-09-20 1995-05-31 株式会社日立製作所 半導体整流ダイオード及びそれを使つた電源装置並びに電子計算機
CA2064146C (en) * 1991-03-28 1997-08-12 Hisashi Ariyoshi Schottky barrier diode and a method of manufacturing thereof
US5262669A (en) * 1991-04-19 1993-11-16 Shindengen Electric Manufacturing Co., Ltd. Semiconductor rectifier having high breakdown voltage and high speed operation
US5262668A (en) * 1992-08-13 1993-11-16 North Carolina State University At Raleigh Schottky barrier rectifier including schottky barrier regions of differing barrier heights
JP3099557B2 (ja) * 1992-11-09 2000-10-16 富士電機株式会社 ダイオード
US5949124A (en) * 1995-10-31 1999-09-07 Motorola, Inc. Edge termination structure
US5859465A (en) * 1996-10-15 1999-01-12 International Rectifier Corporation High voltage power schottky with aluminum barrier metal spaced from first diffused ring
US6362495B1 (en) 1998-03-05 2002-03-26 Purdue Research Foundation Dual-metal-trench silicon carbide Schottky pinch rectifier
US5998833A (en) 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6621121B2 (en) 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
DE59914652D1 (de) 1998-11-18 2008-03-27 Infineon Technologies Ag Halbleiterbauelement mit dielektrischen oder halbisolierenden abschirmstrukturen
US6313482B1 (en) 1999-05-17 2001-11-06 North Carolina State University Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
US6191447B1 (en) 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
AU2000267698A1 (en) * 2000-01-19 2001-07-31 Fabtech, Inc. Distributed reverse surge guard
US6717229B2 (en) 2000-01-19 2004-04-06 Fabtech, Inc. Distributed reverse surge guard
GB0002235D0 (en) 2000-02-02 2000-03-22 Koninkl Philips Electronics Nv Trenched schottky rectifiers
GB0003184D0 (en) 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv A semiconductor device and a method of fabricating material for a semiconductor device
GB0102734D0 (en) 2001-02-03 2001-03-21 Koninkl Philips Electronics Nv Bipolar diode
US6462393B2 (en) * 2001-03-20 2002-10-08 Fabtech, Inc. Schottky device
JP4857484B2 (ja) * 2001-04-20 2012-01-18 富士電機株式会社 半導体装置およびその製造方法
US6740951B2 (en) * 2001-05-22 2004-05-25 General Semiconductor, Inc. Two-mask trench schottky diode
GB0118000D0 (en) * 2001-07-24 2001-09-19 Koninkl Philips Electronics Nv Manufacture of semiconductor devices with schottky barriers
US7323402B2 (en) * 2002-07-11 2008-01-29 International Rectifier Corporation Trench Schottky barrier diode with differential oxide thickness
US6855593B2 (en) * 2002-07-11 2005-02-15 International Rectifier Corporation Trench Schottky barrier diode
GB0312512D0 (en) 2003-05-31 2003-07-09 Koninkl Philips Electronics Nv Termination structures for semiconductor devices and the manufacture thereof
US20050110038A1 (en) * 2003-11-21 2005-05-26 Hamerski Roman J. High voltage semiconductor device having current localization region
US7492018B2 (en) * 2004-09-17 2009-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. Isolating substrate noise by forming semi-insulating regions
US7952139B2 (en) * 2005-02-11 2011-05-31 Alpha & Omega Semiconductor Ltd. Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
DE102006049908A1 (de) * 2006-10-23 2008-04-30 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Elektrische Lichtquelle, insbesondere für den Einsatz in einem Reflektor
TWI384625B (zh) * 2008-06-30 2013-02-01 Alpha & Omega Semiconductor 提高蕭特基崩潰電壓且不影響金氧半導體-蕭特基整合裝置之裝置佈局及方法
US9093521B2 (en) * 2008-06-30 2015-07-28 Alpha And Omega Semiconductor Incorporated Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
US8502302B2 (en) * 2011-05-02 2013-08-06 Alpha And Omega Semiconductor Incorporated Integrating Schottky diode into power MOSFET
TW201911583A (zh) * 2017-07-26 2019-03-16 新唐科技股份有限公司 異質接面蕭特基二極體元件
IT202000017221A1 (it) 2020-07-15 2022-01-15 St Microelectronics Srl Dispositivo elettronico a semiconduttore ad ampia banda proibita comprendente un diodo jbs avente migliorate caratteristiche elettriche e relativo procedimento di fabbricazione

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL153374B (nl) * 1966-10-05 1977-05-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting voorzien van een oxydelaag en halfgeleiderinrichting vervaardigd volgens de werkwijze.
US3513366A (en) * 1968-08-21 1970-05-19 Motorola Inc High voltage schottky barrier diode
US3581151A (en) * 1968-09-16 1971-05-25 Bell Telephone Labor Inc Cold cathode structure comprising semiconductor whisker elements
NL7007171A (en]) * 1970-05-16 1971-11-18
US3924320A (en) * 1972-04-14 1975-12-09 Ibm Method to improve the reverse leakage characteristics in metal semiconductor contacts
NL163898C (nl) * 1974-03-16 1980-10-15 Nippon Musical Instruments Mfg Werkwijze voor het vervaardigen van een veldeffect- transistor met onverzadigde stroom-spanningskarakteri- stieken.
JPS5935183B2 (ja) * 1975-08-20 1984-08-27 サンケイ電気 （株） シヨツトキバリア半導体装置
GB1573309A (en) * 1976-03-24 1980-08-20 Mullard Ltd Semiconductor devices and their manufacture
JPS5329679A (en) * 1976-08-31 1978-03-20 Mitsubishi Electric Corp Junction type field effect semiconductor device
US4181542A (en) * 1976-10-25 1980-01-01 Nippon Gakki Seizo Kabushiki Kaisha Method of manufacturing junction field effect transistors
JPS5918870B2 (ja) * 1977-05-15 1984-05-01 財団法人半導体研究振興会 半導体集積回路
SE7813285L (sv) * 1977-12-23 1979-06-24 Gen Electric Feltstyrd, sleckbar tyristor och felteffekttransistor av sperrskikttyp samt sett for tillverkning derav
GB2111745B (en) * 1981-12-07 1985-06-19 Philips Electronic Associated Insulated-gate field-effect transistors

Also Published As

Publication number Publication date
US4646115A (en) 1987-02-24
DE3463873D1 (en) 1987-06-25
EP0147893A1 (en) 1985-07-10
JPS60158677A (ja) 1985-08-20
EP0147893B1 (en) 1987-05-20
GB8333818D0 (en) 1984-02-01
GB2151844A (en) 1985-07-24

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Legal Events

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